Etching
Etcher - Inductively Coupled Plasma Reactive Ion (ICP-RIE) - Trion Technology Phantom III
The Trion Phantom III dry etcher is designed to supply state-of-the-art plasma etch capability for single wafers, dies or parts using fluorine and oxygen based chemistries. It features both RIE and ICP RF sources.
Etcher - Inductively Coupled Plasma Reactive Ion (ICP-RIE) - Trion Technology Phantom III
Features
- Process gases (4 MFCs): CF4, CHF3, O2 and Ar
- Able to etch photoresist, SiO2, Si3N4, Si, Ti-W and other organic materials
- Able to process in both RIE (bottom of the reactor) and/or ICP (top of the reactor) modes
- RIE and ICP sources: 600 W, 13.56 MHz RF generators
- Sample size: 2" to 200 mm single wafers, dies or parts
- Automatic pressure control
- Touch screen interface and PC process controller enable easy operation
Location
Electrical Engineering Cleanroom
Davis Hall, Suite 114
University at Buffalo North Campus
Buffalo, NY 14260
Fees
- Internal Academic: $25
- External Academic: $25
- Industry: $100
For general inquiries, contact:
Donald J. Goralski
Director, Shared Instrumentation Laboratories
(716) 645-5151
For technical inquiries, contact:
Jeff Salzmann
Assistant Professor of Research, Cleanroom Manager
(716) 645-2584